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SuperBlueTM LEDs
C430CB230-S000
Cree's low-current SuperBlue LEDs combine highly efficient GaN with Cree's proprietary G*SiC(R) substrate to deliver the ultimate price/performance for blue LEDs. The C430CB230-S0100 is designed for use in backlighting and display applications. Cree's CB chips are sorted onto tape and compatible with most radial and SMT LED assembly processes.
FEATURES
* High Performance - * * 650 W (465 nm)
APPLICATIONS
* * Segmented Displays High-Resolution Video Displays
Single Wire Bond Structure Class 2 ESD Rating
C430CB230-S000 Chip Diagram
Top View G*SiC LED Chip 200 x 200 m Mesa (junction) 176 x 176 m Gold Bond Pad 112 m Diameter
Bottom View
Die Cross Section Anode (+)
R3AB, Rev. H Datasheet: CP
SiC Substrate t = 250 m
Backside Metallization Cathode (-)
Subject to change without notice. www.cree.com
Maximum Ratings at TA = 25C Notes &3 DC Forward Current Peak Forward Current (1/10 duty cycle @ 1kHz) LED Junction Temperature Reverse Voltage Operating Temperature Range Storage Temperature Range Electrostatic Discharge Threshold (HBM)
Note 2
C430CB230-S000 15 mA 35 mA 125C 5V -40C to +100C -40C to +100C 1000 V Class 2
Note 3
Electrostatic Discharge Classification (MIL-STD-883E)Note 2 Typical Electrical/Optical Characteristics at TA = 25C, If = 0 mA Part Number Forward Voltage (Vf, V) Typ. C430CB230-S0100 4.0 Max. 4.5 Radiant Flux (P, W) Min. 425 Typ. 650 Reverse Current [I(Vr=5V), A] Max. 10
Flux (mlm) Typ. 40
Peak Wavelength (d, nm) Typ. 428
Dominant Wavelength (d, nm) Min. 462 Typ. 465 Max. 466
Full Width Half Max (D, nm) Typ. 60
Mechanical Specifications Description P-N Junction Area (m) Top Area (m) Bottom Area (m) Chip Thickness (m) Au Bond Pad Diameter (m) Au Bond Pad Thickness (m) Back Contact Metal Area (m)
C430CB230-S000 Dimension 176 x 176 200 x 200 200 x 200 250 112 1.2 20 Tolerance 25 25 25 25 20 0.5 10
Notes:
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Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325C (<5 seconds). Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is performed on each die. The ESD classification of Class II is based on sample testing according to MIL-STD-883E. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assembled and operated at 10 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an integrating sphere using Illuminance A. Specifications are subject to change without notice.
Copyright (c) 1999-2004 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G*SiC are registered trademarks, and SuperBlue is a trademark of Cree, Inc.
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com
2
CPR3AB Rev. H

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